By H. Matsunami (auth.), Dr. Mahmud M. Rahman, Dr. Cary Y.-W. Yang, Dr. Gary L. Harris (eds.)
This quantity includes written models of the papers offered on the moment Inter nationwide convention on Amorphous and Crystalline Silicon Carbide and comparable fabrics (ICACSC 1988), which used to be held at Santa Clara college on Decem ber 15 and sixteen, 1988. The convention the 1st ICACSC held at Howard collage, Washington DC, in December 1987 and persevered to supply an in ternational discussion board for dialogue and alternate of principles and effects masking the present prestige of analysis on SiC and comparable fabrics. ICACSC 1988 attracted one hundred and five individuals from 5 international locations. The immense elevate within the variety of papers in comparison with the former 12 months is a sign of the growing to be curiosity during this box. Of the forty five papers awarded on the convention, 36 refereed manuscripts are incorporated during this quantity, whereas the rest nine seem as abstracts. The six invited papers offer exact reports of contemporary effects on amorphous and crystalline silicon carbide fabrics and units, in addition to diamond skinny motion pictures. the amount is split into six elements, every one protecting an enormous subject of the conference.
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Additional info for Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988
Yoshida and S. Nakajima: J. Appl. 1657-1659 4. Y. Hattori, D. Kruangam, T. Toyama, H. Okamato and Y. Hamakawa : 3rd Intl. Photovoltaic Sci. & Eng. , Tokyo, Tech. Dig. pp171-174 (1987) 5. M. M, Rahman and S. Furukawa: Jpn. J. Appl. , 23, pp515-524 (1984) 6. T. Fukazawa, K. Sasaki and S. Furukawa: to be submitted 53 High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method M. Nishikuni, H. Dohjoh, K. Ninomiya, N. Nakamura, T. Matsuoka, S. Tsuda, S. Nakano, M. Ohnishi, and Y.
J. Appl. , QU, (4), 1479 . (1986). 25 Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, and T. , 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan Undoped inch-sized n-type single crystal ingots of 6H-SiC have been successfully fabricated, and degradation (emission color shift from blue to greenish-blue) of SiC blue LEOs prepared using off-angle substrates is effectively prevented. The temperature gradient between the source material and the seed was set at 15-20·C/em, and the pressure was 1-15 mbar.
A Ii/AI electrode for p-type SiC is better suited than an AI/Si electrode. After heat treatment at a temperature of 950'C(5 min, in a vacuum)and removal of the electrode, the surface of the SiC has smooth, and the depth of < 31 . 103 ~----------------------------------, n-epi layer C-face -00-. - __ o . " Si-face o p-ep; layer C-face -- --~- ......... ~ .... .... Fig. 14 Relationship between Hall Mobility and Carrier Concentration . . 1------______ ! 'oW" l /p-type electrode (AlIT i) 'TmOFO,matioo Ii!
Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988 by H. Matsunami (auth.), Dr. Mahmud M. Rahman, Dr. Cary Y.-W. Yang, Dr. Gary L. Harris (eds.)